QS5U23
2,5 V Antriebs-Pch+SBD-MOSFET

ROHMs MOSFETs haben durch die Mikrobearbeitungstechnologien einen geringen RDS-(Einschalt)-Widerstand und sind in verschiedenen Ausführungen erhältlich, wie die Hybrid-Ausführung (MOSFET + Schottky-Diode), sodass unterschiedliche Marktbedürfnisse erfüllt werden.

Data Sheet Kaufen *
* Dieses Produkt entspricht der Standardqualifizierung.
Für den Automobilbereich kontaktieren Sie bitte unser Sales-Team.

Produktdetails

 
Teilenummer | QS5U23TR
Status | Aktiv
Gehäuse | TSMT5
Einheitenmenge | 3000
Minimale Gehäusemenge | 3000
Gehäusetyp | Taping
RoHS | Ja

Spezifikationen:

Grade

Standard

Package Code

SOT-25T

Package Size [mm]

2.9x2.8 (t=1)

Number of terminal

5

Polarity

Pch+Schottky

Drain-Source Voltage VDSS[V]

-20

Drain Current ID[A]

-1.5

RDS(on)[Ω] VGS=2.5V(Typ.)

0.26

RDS(on)[Ω] VGS=4V(Typ.)

0.18

RDS(on)[Ω] VGS=4.5V(Typ.)

0.16

RDS(on)[Ω] VGS=Drive (Typ.)

0.26

Total gate charge Qg[nC]

4.2

Power Dissipation (PD)[W]

0.9

Drive Voltage[V]

-2.5

Reverse voltage VR (Diode) [V]

20.0

Forward Current IF (Diode) [A]

0.5

Forward Current Surge Peak IFSM (Diode) [A]

2.0

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Eigenschaften:

· Mittelleistungs-MOSFET mit mehreren Schottky-Barriere-Dioden
· Kleines, oberflächenmontierbares Gehäuse
· Bleifrei/RoHS-konform

Ressourcen entwerfen

 

Technische Artikel

Schematic Design & Verification

  • Temperature derating method for Safe Operating Area (SOA)
  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • What Is Thermal Design
  • Basics of Thermal Resistance and Heat Dissipation
  • Method for Calculating Junction Temperature from Transient Thermal Resistance Data
  • Notes for Temperature Measurement Using Thermocouples
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (Transistor)
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Design Tools

Models

  • QS5U23 SPICE Model
  • QS5U23 Thermal Model (lib)
  • How to Create Symbols for PSpice Models

Characteristics Data

  • ESD Data

Packaging & Qualität

Package Information

  • Package Dimensions
  • Inner Structure
  • Taping Information
  • Explanation for Marking
  • Condition of Soldering
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Manufacturing Data

  • Reliability Test Result

Environmental Data

  • Constitution Materials List - Please contact us by filling in the form.
  • About Flammability of Materials
  • About Non-use SVHC under Reach Regulation : Please contact us by filling in the form.
  • Compliance of the RoHS / ELV directive

Export Information

  • About Export Regulations