RD3P175SN
Nch 100V 17,5A Leistungs-MOSFET
RD3P175SN
Nch 100V 17,5A Leistungs-MOSFET
Der RD3P175SN ist ein Leistungs-MOSFET mit niedrigem Durchlassiwderstand für Schaltanwendungen.
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Produktdetails
Spezifikationen:
Package Code
TO-252 (DPAK)
JEITA Package
SC-63
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
100
Drain Current ID[A]
17.5
RDS(on)[Ω] VGS=4V(Typ)
0.085
RDS(on)[Ω] VGS=4.5V(Typ)
0.08
RDS(on)[Ω] VGS=10V(Typ)
0.075
RDS(on)[Ω] VGS=Drive (Typ)
0.085
Total gate charge Qg[nC]
24
Power Dissipation (PD)[W]
20
Drive Voltage[V]
4
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
6.6x10.0 (t=2.4)
Eigenschaften:
- Low on-resistance.
- Fast switching speed.
- Drive circuits can be simple.
- Parallel use is easy.
- Pb-free plating ; RoHS compliant
Reference Design / Application Evaluation Kit
-
- Evaluation Board - BM64300MUV-EVK-001
Drive Board for Three-phase Brushless Motor using Three Hall Sensors (Pre-driver BM64300MUV)