RJ1N10BBH (Neues Produkt)
Nch 80V 235A, TO-263AB, Power MOSFET
RJ1N10BBH (Neues Produkt)
Nch 80V 235A, TO-263AB, Power MOSFET
RJ1N10BBH is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
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Produktdetails
Spezifikationen:
Package Code
TO-263AB
Applications
Switching
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
80
Drain Current ID[A]
235
RDS(on)[Ω] VGS=6V(Typ)
0.00191
RDS(on)[Ω] VGS=10V(Typ)
0.00166
RDS(on)[Ω] VGS=Drive (Typ)
0.00191
Total gate charge Qg[nC]
120
Power Dissipation (PD)[W]
189
Drive Voltage[V]
6
Trr (Typ)[ns]
92
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
10.11x15.1 (t=4.77)
Eigenschaften:
- Low on - resistance
- High power mold package (TO263AB)
- Pb-free plating ; RoHS compliant
- Halogen Free
- 100% Rg and UIS tested
