ROHM Product Detail

RJ1P04BBH
Nch 100V 80A, TO-263AB, Power MOSFET

RJ1P04BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.

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Produktdetails

 
Teilenummer | RJ1P04BBHTL1
Status | Empfohlen
Gehäuse | TO-263AB-3LSHYAD
Gehäusetyp | Taping
Einheitenmenge | 800
Minimale Gehäusemenge | 800
RoHS | Ja

Spezifikationen:

Package Code

TO-263AB

Applications

Switching

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

100

Drain Current ID[A]

80

RDS(on)[Ω] VGS=6V(Typ)

0.0084

RDS(on)[Ω] VGS=10V(Typ)

0.0068

RDS(on)[Ω] VGS=Drive (Typ)

0.0084

Total gate charge Qg[nC]

25

Power Dissipation (PD)[W]

89

Drive Voltage[V]

6

Trr (Typ)[ns]

63

Mounting Style

Surface mount

Storage Temperature (Min)[℃]

-55

Storage Temperature (Max)[℃]

150

Package Size [mm]

10.11x15.1 (t=4.77)

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Eigenschaften:

  • Low on - resistance
  • High power small mold package(TO263AB)
  • Pb-free plating ; RoHS compliant
  • 100% UIS tested

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