Models
- RQ3E070BN SPICE Model
- RQ3E070BN Thermal Model (lib)
Characteristics Data
- ESD Data
RQ3E070BN ist ein Hochleistungsgehäuse (HSMT8) MOSFET für die Schaltfunktion.
Grade
Standard
Package Code
HSMT8 (3.3x3.3)
Package Size[mm]
3.3x3.3 (t=0.8)
Applications
Switching, Motor
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
15.0
RDS(on)[Ω] VGS=4.5V(Typ.)
0.029
RDS(on)[Ω] VGS=10V(Typ.)
0.02
RDS(on)[Ω] VGS=Drive (Typ.)
0.029
Total gate charge Qg[nC]
4.6
Power Dissipation (PD)[W]
13.0
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4009
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150