RS6G120CH
N-Kanal 40V 300A, HSOP8, Power MOSFET
RS6G120CH
N-Kanal 40V 300A, HSOP8, Power MOSFET
Der RS6G120CH ist ein Leistungs-MOSFET mit niedrigem Durchlasswiderstand und einem Hochleistungsgehäuse, der sich für Schaltanwendungen, Motorantriebe und DC/DC-Wandler eignet.
Für den Automobilbereich kontaktieren Sie bitte unser Sales-Team.
Produktdetails
Spezifikationen:
Package Code
HSOP8
Applications
Switching
Number of terminal
8
Polarity
N
Drain-Source Voltage VDSS[V]
40
Drain Current ID[A]
300
RDS(on)[Ω] VGS=6V(Typ)
0.00125
RDS(on)[Ω] VGS=10V(Typ)
0.00078
RDS(on)[Ω] VGS=Drive (Typ)
0.00125
Total gate charge Qg[nC]
44
Power Dissipation (PD)[W]
166
Drive Voltage[V]
6
trr (Typ.)[ns]
70
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
175
Package Size [mm]
6.0x4.9 (t=1.1)
Eigenschaften:
- Geringer Einschaltwiderstand
- Hochleistungsgehäuse (HSOP8)
- Bleifreie Beschichtung; RoHS-konform
- Halogenfrei
- 100 % Rg- und UIS-getestet
Referenzdesign / Anwendungsevaluierungskit
-
- Reference Design - REF68021
- 1.3kW Half-Bridge LLC Evaluation Board
The HBLLC-TSB-001 is a 1.3 kW half-bridge LLC resonant converter test board designed for applications such as data-center server power supplies, BBUs, and industrial equipment. Operating from a 390 V DC input, it delivers a 12 V output with a maximum current of 108 A. The board is equipped with 4th-generation SJ-MOSFETs on the primary side and 7th-generation synchronous rectification (SR) MOSFETs on the secondary side, achieving a peak efficiency of 97.0%.
*This design is provided for reference purposes only.
