ROHM Product Detail

RQ3N060AT (Neues Produkt)
Pch -80V -18A, HSMT8, Power MOSFET

RQ3N060AT is a power MOSFET with low-on resistance and High power package, suitable for Switching and Motor drives applications.

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Produktdetails

 
Teilenummer | RQ3N060ATTB1
Status | Empfohlen
Gehäuse | HSMT8
Gehäusetyp | Taping
Einheitenmenge | 3000
Minimale Gehäusemenge | 3000
RoHS | Ja

Spezifikationen:

Package Code

HSMT8 (3.3x3.3)

Applications

Switching

Number of terminal

8

Polarity

Pch

Drain-Source Voltage VDSS[V]

-80

Drain Current ID[A]

-18

RDS(on)[Ω] VGS=6V(Typ)

0.046

RDS(on)[Ω] VGS=10V(Typ)

0.04

RDS(on)[Ω] VGS=Drive (Typ)

0.046

Total gate charge Qg[nC]

32

Power Dissipation (PD)[W]

20

Drive Voltage[V]

-6

Trr (Typ)[ns]

35

Mounting Style

Surface mount

Storage Temperature (Min)[℃]

-55

Storage Temperature (Max)[℃]

150

Package Size [mm]

3.3x3.3 (t=0.9)

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Eigenschaften:

  • Low on - resistance
  • High Power small mold Package (HSMT8)
  • Pb-free plating ; RoHS compliant
  • 100% Rg and UIS tested
  • Halogen Free
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