BV1HJ045EFJ-C
1-Kanal-High-Side-Schalter mit eingebauter Ausgangsdiagnose
Für neue Designs nicht empfohlen
BV1HJ045EFJ-C
1-Kanal-High-Side-Schalter mit eingebauter Ausgangsdiagnose
Produkte, die nicht für neue Designs verwendet werden können (Nicht empfohlen für Designabweichungen).
Produktdetails
Funktionalen Sicherheit:
Spezifikationen:
Type
High side switches
Generation
GEN2
Qualification Grade
AEC-Q100 (Automotive Grade)
Feature
Standard / Error Flag
Overcurrent Protection
Limitation
Thermal Shut Down
Self-restart
Channel Number [ch]
1
ON Resistance(Typ.)[mΩ]
45
ON Resistance(Max.)[mΩ]
90
DC Output Current @Ta=85℃ [A]
4.8
Supply Voltage(Min.)[V]
6
Supply Voltage(Max.)[V]
28
Drain-Source Voltage (Max.)[V]
45
Single Pulse Energy 25°C [mJ]
120
Over Current Limit (Min.)[A]
5
Under voltage Detection Level(Max.)[V]
5
Current consumption(Typ.)[µA]
2000
Open Load Detect [V]
3
Junction Temperature Tj (Min.)[°C]
-40
Junction Temperature Tj (Max.)[°C]
150
Package Size [mm]
4.9x6.0 (t=1.0)
Eigenschaften:
- Built-in Dual TSD
(Two type of built-in temperature protection : Junction temperature, and ΔTj protection that detects sudden temperature rise of the Power-MOS) - AEC-Q100 Qualified (Grade 1)
- Built-in Overcurrent Protection Function (OCP)
- Built-in Thermal Shutdown Protection Function (TSD)
- Built-in Open Load Detection Function
- Built-in Short-to-VBB Detection Function
- Built-in Low Voltage Output OFF Function (UVLO)
- Built-in Reverse Battery Connection Protection
- Built-in Diagnostic Output
- Low On-Resistance Single Nch MOSFET Switch
- Monolithic power management IC with control unit (CMOS) and power MOSFET mounted on a single chip
