BM2LE160FJ-C (In Entwicklung)
Automotive IPD, 2ch Low Side Switch with Output Diagnostic Function
BM2LE160FJ-C
BM2LE160FJ-C (In Entwicklung)
Automotive IPD, 2ch Low Side Switch with Output Diagnostic Function
BM2LE160FJ-C is 2ch low side switch IC for 12V automotive applications. It has built-in OCP, Dual TSD and Active Clamp function. It is equipped with output diagnostic function for TSD.
Produktdetails
Teilenummer | BM2LE160FJ-CE2
Status |
In Entwicklung
Gehäuse |
SOP-J8
Einheitenmenge | 2500
Minimale Gehäusemenge | 2500
Gehäusetyp | Taping
RoHS |
Ja
Funktionalen Sicherheit:
Kategorie : FS supportive
A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the functional safety.
Spezifikationen:
Grade
Automotive
Common Standard
AEC-Q100 (Automotive Grade)
Channel Number [ch]
2
Drain-Source Voltage (Max.)[V]
40
Output Current[A]
5
ON Resistance [mΩ]
160
Over Current Detect [A]
5
Active Clamp Energy [mJ]
90
Supply Voltage(Min.)[V]
3
Supply Voltage(Max.)[V]
5.5
Current consumption(Typ.)[µA]
100
Thermal Shut Down
Self-restart
Status Terminal
Available
Junction Temperature Tj (Min.)[°C]
-40
Junction Temperature Tj (Max.)[°C]
150
Package Size [mm]
4.9x6 (t=1.65)
Eigenschaften:
- Built-in Dual TSD®(This IC has thermal shutdown(Junction temperature detect) and ΔTj Protection(Power-MOS steep temperature rising detect))
- AEC-Q100 Qualified(Grade1)
- Built-in Over Current Protection Function(OCP)
- Built-in Active Clamp Function
- Direct Control Enabled from CMOS Logic IC, etc.
- On Resistance RDS(ON) = 160mΩ(Typ)
(when VIN = 5V, IOUT = 1.0A, Tj = 25℃) - Monolithic Power Management IC with the Control Block(CMOS) and Power MOS FET Mounted on a Single Chip
