BV1LB025FPJ-C (Neues Produkt)
Automotive IPD 1ch Low Side Switch

BV1LB025FPJ-C is 1ch low side switch IC for 12 V automotive applications. It has built-in OCP, Dual TSD and Active Clamp function.

Produktdetails

 
Teilenummer | BV1LB025FPJ-CE1
Status | Empfohlen
Gehäuse | TO252-J3
Gehäusetyp | Taping
Einheitenmenge | 2000
Minimale Gehäusemenge | 2000
RoHS | Ja

Funktionalen Sicherheit:

Kategorie : FS supportive
A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the functional safety.

Spezifikationen:

Type

Low side switches

Generation

GEN2

Qualification Grade

AEC-Q100 (Automotive Grade)

Feature

Standard / Error Flag

Overcurrent Protection

Limitation

Thermal Shut Down

Self-restart

Channel Number [ch]

1

ON Resistance(Typ.)[mΩ]

25

ON Resistance(Max.)[mΩ]

62.5

Nominal Current(Typ.)[A]

27

Supply Voltage(Min.)[V]

3

Supply Voltage(Max.)[V]

5.5

Drain-Source Voltage (Max.)[V]

40

Single Pulse Energy 25°C [mJ]

450

Over Current Limit (Min.)[A]

27

Under voltage Detection Level(Max.)[V]

3

Current consumption(Typ.)[µA]

100

Junction Temperature Tj (Min.)[°C]

-40

Junction Temperature Tj (Max.)[°C]

150

Package Size [mm]

6.6x10.1 (t=2.5)

Find Similar

Eigenschaften:

  • Built-in Dual TSD (This IC has thermal shutdown (Junction temperature detect) and ΔTj Protection (Power-MOS steep temperature rising detect).)
  • AEC-Q100 Qualified (Grade1)
  • Built-in Over Current Protection Function (OCP)
  • Built-in Active Clamp Function
  • Direct Control Enabled from CMOS Logic IC, etc.
  • On Resistance RDS(ON) = 25 mΩ (Typ)
    (when VIN = 5 V, IOUT = 2.4 A, Tj = 25 ℃)
  • Monolithic Power Management IC with the Control Block (CMOS) and Power MOS FET Mounted on a Single Chip
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