BV1LE080EFJ-C (In Entwicklung)
Automotive IPD, 1ch Low Side Switch with Output Diagnostic Function

BV1LE080EFJ-C is 1ch low side switch IC for 12V automotive applications. It has built-in OCP, Dual TSD and Active Clamp function. It is equipped with output diagnostic function for TSD.

Data Sheet Kaufen
Data Sheet Kaufen

Produktdetails

 
Teilenummer | BV1LE080EFJ-CE2
Status | In Entwicklung
Gehäuse | HTSOP-J8
Einheitenmenge | 2500
Minimale Gehäusemenge | 2500
Gehäusetyp | Taping
RoHS | Ja

Funktionalen Sicherheit:

Kategorie : FS supportive
A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the functional safety.

Spezifikationen:

Grade

Automotive

Common Standard

AEC-Q100 (Automotive Grade)

Channel Number [ch]

1

Drain-Source Voltage (Max.)[V]

40.0

Output Current[A]

9.0

ON Resistance [mΩ]

80

Over Current Detect [A]

9

Active Clamp Energy [mJ]

200.0

Supply Voltage(Min.)[V]

3

Supply Voltage(Max.)[V]

5.5

Current consumption(Typ.)[µA]

100

Thermal Shut Down

Self-restart

Status Terminal

Available

Junction Temperature Tj (Min.)[°C]

-40

Junction Temperature Tj (Max.)[°C]

150

Package Size [mm]

4.9x6 (t=1)

Find Similar

Eigenschaften:

  • Built-in Dual TSD(This IC has thermal shutdown(Junction temperature detect) and ΔTj Protection(Power-MOS steep temperature rising detect))
  • AEC-Q100 Qualified(Grade1)
  • Built-in Over Current Protection Function(OCP)
  • Built-in Active Clamp Function
  • Direct Control Enabled from CMOS Logic IC, etc.
  • On Resistance RDS(ON) = 80mΩ(Typ)
    (when VIN = 5V, IOUT = 1.5A, Tj = 25℃)
  • Monolithic Power Management IC with the Control Block(CMOS) and Power MOS FET Mounted on a Single Chip