ROHM Product Detail

BV1LY010FPJ-M (In Entwicklung)
Automotive IPD 1ch Low Side Switch

The BV1LY010FPJ-M is an automotive 1ch low side switch IC, which has built-in Dual TSD®, OCP and active clamp function.

Produktdetails

 
Teilenummer | BV1LY010FPJ-ME1
Status | In Entwicklung
Gehäuse | TO252-J3
Gehäusetyp | Taping
Einheitenmenge | 2000
Minimale Gehäusemenge | 2000
RoHS | Ja

Funktionalen Sicherheit:

Kategorie : FS supportive
A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the functional safety.

Spezifikationen:

Type

Low side switches

Generation

GEN2

Qualification Grade

AEC-Q100 (Automotive Grade)

Feature

Standard / Error Flag

Overcurrent Protection

Limitation

Thermal Shut Down

Self-restart

Channel Number [ch]

1

ON Resistance(Typ.)[mΩ]

10

ON Resistance(Max.)[mΩ]

25

Nominal Current(Typ.)[A]

48

Supply Voltage(Min.)[V]

3.5

Supply Voltage(Max.)[V]

5.5

Drain-Source Voltage (Max.)[V]

38

Single Pulse Energy 25°C [mJ]

230

Over Current Limit (Min.)[A]

48

Under voltage Detection Level(Max.)[V]

3.5

Current consumption(Typ.)[µA]

85

Junction Temperature Tj (Min.)[°C]

-40

Junction Temperature Tj (Max.)[°C]

150

Package Size [mm]

6.6x10.1 (t=2.5)

Find Similar

Eigenschaften:

  • Dual TSD® (This IC has thermal shutdown (Junction temperature detect) and ΔTj Protection (Power-MOS steep temperature rising detect).)
  • AEC-Q100 Qualifies (Grade 1)
  • Built-in Over Current Protection Function (OCP)
  • Built-in Active Clamp Function
  • Direct Control Enabled from CMOS Logic IC, etc.
  • On Resistance RDS(ON) = 10mΩ (Typ) (when VIN = 5V, IOUT = 2.4A, Tj = 25℃)
  • Monolithic Power Management IC with the Control Block (CMOS) and Power MOS FET Mounted on a Single Chip
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