SCT4013DE
750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT4013DE
SCT4013DE
750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT4013DE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Data Sheet
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Produktdetails
Spezifikationen:
Drain-source Voltage[V]
750
Drain-source On-state Resistance(Typ.)[mΩ]
13
Generation
4th Gen (Trench)
Drain Current[A]
105
Total Power Dissipation[W]
312
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Eigenschaften:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
