ROHM Product Detail

SCT2H12NWB (Neues Produkt)

1700V, 3.9A, 7-pin SMD, Silicon-carbide (SiC) MOSFET
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SCT2H12NWB
(Neues Produkt)

SCT2H12NWB (Neues Produkt)
1700V, 3.9A, 7-pin SMD, Silicon-carbide (SiC) MOSFET

SCT2H12NWB is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.

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Produktdetails

 
Teilenummer | SCT2H12NWBTL1
Status | Empfohlen
Gehäuse | TO-263CA-7LSHYAD
Gehäusetyp | Taping
Einheitenmenge | 800
Minimale Gehäusemenge | 800
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1700

Drain-source On-state Resistance(Typ.)[mΩ]

1150

Generation

2nd Gen (Planar)

Drain Current[A]

3.9

Total Power Dissipation[W]

39

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

15.5x10.2 (t=4.7)

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Eigenschaften:

  • Low on-resistance
  • Fast switching speed
  • Wide creepage distance = 6.1 mm
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant
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