SCT2H12NY
N-Kanal Siliziumkarbid Leistungs-MOSFET

Dies ist ein planarer SiC (Siliziumkarbid)-MOSFET. Zu den Eigenschaften gehören die hohe Spannungsfestigkeit, der geringe ON-Widerstand und eine schnelle Schaltgeschwindigkeit.

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Produktdetails

 
Teilenummer | SCT2H12NYTB
Status | Empfohlen
Gehäuse | TO-268-2L
Einheitenmenge | 800
Minimale Gehäusemenge | 800
Gehäusetyp | Taping
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1700

Drain-source On-state Resistance(Typ.)[mΩ]

1150.0

Drain Current[A]

4.0

Total Power Dissipation[W]

44

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Eigenschaften:

  • Low on-resistance
  • Fast switching speed
  • Long creepage distance with no center lead
  • Simple to drive
  • Pb-free lead plating; RoHS compliant

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White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

Technische Artikel

Schematic Design & Verification

  • [NEW]Application Note for SiC Power Devices and Modules
  • Calculating Power Loss from Measured Waveforms
  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Precautions during gate-source voltage measurement for SiC MOSFET
  • Snubber circuit design methods for SiC MOSFET
  • Gate-source voltage behaviour in a bridge configuration
  • Gate-Source Voltage Surge Suppression Methods
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Method for Calculating Junction Temperature from Transient Thermal Resistance Data
  • Notes for Temperature Measurement Using Thermocouples
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (SiC Power Device)
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Design Tools

Models

  • SCT2H12NY SPICE Simulation Evaluation Circuit
  • SCT2H12NY Thermal Model (lib)
  • SCT2H12NY SPICE Model
  • How to Create Symbols for PSpice Models

Characteristics Data

  • ESD Data

Packaging & Qualität

Package Information

  • Package Dimensions
  • Taping Information
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Manufacturing Data

  • Reliability Test Result

Environmental Data

  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)