SCT3030ALHR
N-Kanal Siliziumkarbid Leistungs-MOSFET

SCT3017ALHR ist ein SiC (Siliziumkarbid) Trench MOSFET. Seine Merkmale umfassen Hochspannungsfestigkeit, niedrigen Durchlasswiderstand und schnelle Schaltgeschwindigkeit.

Data Sheet Kaufen
Data Sheet Kaufen
  • Unterlagen  
  • Design Tools  
  • Packaging & Qualität  
  • FAQs
  • Kontakt

Produktdetails

 
Teilenummer | SCT3030ALHRC11
Status | Empfohlen
Gehäuse | TO-247N
Einheitenmenge | 450
Minimale Gehäusemenge | 30
Gehäusetyp | Tube
RoHS | Ja

Spezifikationen:

Common Standard

AEC-Q101 (Automotive Grade)

Drain-source Voltage[V]

650

Drain-source On-state Resistance(Typ.)[mΩ]

30.0

Drain Current[A]

70.0

Total Power Dissipation[W]

262

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Eigenschaften:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant
  • Qualified to AEC-Q101
SHOW/HIDE COLUMNS
Liste neuer Produkte

Ressourcen entwerfen

 

Unterlagen

White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

Technische Artikel

Schematic Design & Verification

  • [NEW]Application Note for SiC Power Devices and Modules
  • Calculating Power Loss from Measured Waveforms
  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Precautions during gate-source voltage measurement for SiC MOSFET
  • Snubber circuit design methods for SiC MOSFET
  • Gate-Source Voltage Surge Suppression Methods
  • Gate-source voltage behaviour in a bridge configuration
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Thermocouples
  • What is a Thermal Model? (SiC Power Device)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Design Tools

Simulations (Login Required)

  • Method for Exporting Circuit Data (ROHM Solution Simulator)

Models

  • SCT3030ALHR SPICE Simulation Evaluation Circuit
  • SCT3030ALHR SPICE Model
  • SCT3030ALHR Thermal Model (lib)

Packaging & Qualität

Package Information

  • Package Dimensions
  • Taping Information
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)