650 V 38 A, 7-pin SMD, Siliziumkarbid- (SiC-) MOSFET mit Trench-Struktur

Der SCT3060AW7 ist ein SiC (Siliziumkarbid) Trench-MOSFET. Zu den Merkmalen gehören hohe Spannungsfestigkeit, niedriger Durchlasswiderstand und hohe Schaltgeschwindigkeit.

Data Sheet Kaufen *
* Dieses Produkt entspricht der Standardqualifizierung.
Für den Automobilbereich kontaktieren Sie bitte unser Sales-Team.


Teilenummer | SCT3060AW7TL
Status | Empfohlen
Gehäuse | TO-263-7L
Einheitenmenge | 1000
Minimale Gehäusemenge | 1000
Gehäusetyp | Taping
RoHS | Ja


Drain-source Voltage[V]


Drain-source On-state Resistance(Typ.)[mΩ]


Drain Current[A]


Total Power Dissipation[W]


Junction Temperature(Max.)[°C]


Storage Temperature (Min.)[°C]


Storage Temperature (Max.)[°C]


Package Size [mm]

10.2x9 (t=4.7)


  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

Ressourcen entwerfen



White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

Application Note

  • Improvement of switching loss by driver source

Technische Artikel

Schematic Design & Verification

  • [NEW]Application Note for SiC Power Devices and Modules
  • Calculating Power Loss from Measured Waveforms
  • Calculation of Power Dissipation in Switching Circuit
  • Precautions during gate-source voltage measurement for SiC MOSFET
  • Method for Monitoring Switching Waveform
  • Snubber circuit design methods for SiC MOSFET
  • Gate-source voltage behaviour in a bridge configuration
  • Gate-Source Voltage Surge Suppression Methods
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • What Is Thermal Design
  • Basics of Thermal Resistance and Heat Dissipation
  • Method for Calculating Junction Temperature from Transient Thermal Resistance Data
  • Notes for Temperature Measurement Using Thermocouples
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (SiC Power Device)
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Design Tools


  • How to Create Symbols for PSpice Models
  • SCT3060AW7 PLECS Model
  • SCT3060AW7 SPICE Model

Packaging & Qualität

Package Information

  • TO-263-7L Package Dimensions
  • TO-263-7L Inner Structure
  • TO-263-7L Taping Information
  • TO-263-7L Explanation for Marking
  • Moisture Sensitivity Level
  • Anti-Whisker formation
  • Condition of Soldering

Environmental Data

  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)