SCT3160KL
N-Kanal Siliziumkarbid-Leistungs-MOSFET

SCT3160KL ist ein SiC (Siliziumkarbid) Trench MOSFET. Seine Merkmale umfassen Hochspannungsfestigkeit, niedrigen Durchlasswiderstand und schnelle Schaltgeschwindigkeit.

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Produktdetails

 
Teilenummer | SCT3160KLGC11
Status | Empfohlen
Gehäuse | TO-247N
Einheitenmenge | 450
Minimale Gehäusemenge | 30
Gehäusetyp | Tube
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

160.0

Drain Current[A]

17.0

Total Power Dissipation[W]

103

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x21 (t=5.2)

Eigenschaften:

・ Low on-resistance
・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant

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  • A-001. Boost PFC VIN=200V, IIN=2.5A BCM
  • A-002. Boost PFC VIN=200V, IIN=2.5A CCM
  • A-003. Boost PFC VIN=200V, IIN=2.5A CCM Synchronous FETs
  • A-004. Boost PFC VIN=200V, IIN=2.5A DCM
  • A-005. Boost PFC VIN=200V, IIN=2.5A DCM Synchronous FETs
  • A-006. Interleaved PFC VIN=200V, IIN=2.5A CCM
  • A-008. Interleaved PFC VIN=200V, IIN=2.5A DCM
  • A-012. Diode-Bridgeless PFC VIN=200V, IIN=2.5A BCM
  • C006. DC-DC Converter, Buck Converter Vo=250V Io=20A
  • C007. DC-DC Converter, Buck Converter 2-Phase Vo=250V Io=40A
  • C010. DC-DC Converter, Flyback Converter VIN=800V Vo=25V Io=10A
  • C011. DC-DC Converter, Forward Converter VIN=500V Vo=25V Io=10A
  • C012. DC-DC Converter, LLC Buck Converter Vo=12V Io=250A
  • C013. DC-DC Converter, Phase-Shift Buck Converter Vo=12V Io=250A
  • C014. DC-DC Converter, Quasi-Resonant Converter VIN=800V Vo=25 Io=10A

Models

Characteristics Data