SCT4045DR
750V, 45mΩ, 4-Pin THD, Trench-Struktur, Siliziumkarbid(SiC) Leistungs-MOSFET
SCT4045DR
750V, 45mΩ, 4-Pin THD, Trench-Struktur, Siliziumkarbid(SiC) Leistungs-MOSFET
Der SCT4045DR ist ein SiC-MOSFET, der zur Miniaturisierung und zum geringen Stromverbrauch von Anwendungen beiträgt. Es handelt sich um ein Produkt der 4. Generation, das einen branchenweit führenden niedrigen Durchlasswiderstand erreicht, ohne die Kurzschlussfestigkeit zu beeinträchtigen. Es ist ein 4-Pin-Gehäusetyp mit einem Driver-Source-Anschluss, der die Hochgeschwindigkeits-Schaltleistung maximieren kann, die ein Merkmal von SiC-MOSFETs ist.
Vorteile von ROHMs SiC-MOSFET der 4. Generation
Diese Serie hat einen um 40 % geringeren Durchlasswiderstand und einen um 50 % geringeren Schaltverlust im Vergleich zu herkömmlichen Produkten. Die 15V-Gate-Source-Spannung erleichtert das Design der Anwendung.
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Produktdetails
Spezifikationen:
Drain-source Voltage[V]
750
Drain-source On-state Resistance(Typ.)[mΩ]
45
Generation
4th Gen (Trench)
Drain Current[A]
34
Total Power Dissipation[W]
115
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x23.45 (t=5.2)
Eigenschaften:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
Reference Design / Application Evaluation Kit
-
- Evaluation Board - P05SCT4018KR-EVK-001
- This board is designed with the optimum gate drive circuit for "SCT4018KR", surely TO-247-4L can also be evaluated
- Single power supply(+12V operation)
- Supports double pulse testing up to 150A and switching up to 500kHz
- Supports various power supply topologies(Buck, Boost, Half-Bridge)
- Built-in adjustable gate drive isolated power supply(positive and negative)(+12V to +25V, -4.5V to -2V)
- Active mirror clamp circuit(driver IC built-in type)
- Gate surge clamp circuit
-
- Application EVK - APEVK66001
- Industrial 3.6kW Totem Pole PFC Application EVK
Various applications are equipped with AC/DC functions, and the Totem Pole PFC topology is the standard circuit.The TPPFCSIC-EVK-301 implements a single-phase AC/DC conversion stage in Totem Pole PFC topology. Key components are ROHM Gen.4 SiC MOSFETs (SCT4045DR) as the main high-frequency switching elements, as well as the BM61S41 single-channel isolated gate driver IC. In addition, SJ MOSFETs and auxiliary power supply, among other components from ROHM, were utilized to create a high-performance AC/DC circuit for single-phase operation.TPPFCSIC-EVK-301 reaches up to 98.5％ efficiency at 230Vac.If this Totem Pole PFC reference design is coupled with a secondary stage of comparable efficiency, it becomes possible to achieve the 80+ Titanium target efficiency of power supply products. Moreover, this contributes to enhancing the Annual Performance Factor (APF) of air conditioners.
This reference design consists of two boards. Each is shown below.
- TPPFCSIC-EVK-201_PCB3051：Totem Pole PFC Board
- TPPFCSIC-EVK-201_PCB3052 : AUX Power Supply Board
The software for this reference design can be downloaded from below.
[TPPFCSIC-EVK-301_SW.zip Download]
