ROHM Product Detail

BSM120D12P2C005
SiC-Leistungsmodul

Halbbrückenmodule bestehend aus SiC-DMOSFETs und SiC-SBDs von ROHM.

Data Sheet Kaufen *
* Dieses Produkt entspricht der Standardqualifizierung.
Für den Automobilbereich kontaktieren Sie bitte unser Sales-Team.
Data Sheet Kaufen *

Produktdetails

 
Teilenummer | BSM120D12P2C005
Status | Empfohlen
Gehäuse | C Type
Gehäusetyp | Corrugated Cardboard
Einheitenmenge | 12
Minimale Gehäusemenge | 12
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1200

Drain Current[A]

134

Total Power Dissipation[W]

935

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half-bridge

Package Size [mm]

122.0x45.6 (t=17.5)

Find Similar

Eigenschaften:

・Full SiC power module with SiC MOSFET and SiC SBD
・High-speed switching and low switching loss
・Ensured reliability of body diode conduction

Referenzdesign / Anwendungsevaluierungskit

 
    • Drive Board - BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH26

    • Snubber Module for BSM series (1200V, C type)

    • Drive Board - TAMURA 2DU series

    • Drive Board for BSM series (1200V, C / E / G type)

    •

Produktvideo & Katalog

 
Loading...
X

Most Viewed