BSM120D12P2C005
SiC-Leistungsmodul

Halbbrückenmodule bestehend aus SiC-DMOSFETs und SiC-SBDs von ROHM.

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Produktdetails

 
Teilenummer | BSM120D12P2C005
Status | Empfohlen
Gehäuse | C
Einheitenmenge | 12
Minimale Gehäusemenge | 12
Gehäusetyp | Corrugated Cardboard
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1200

Drain Current[A]

134

Total Power Dissipation[W]

935

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

122x45.6 (t=17.5)

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Eigenschaften:

・Full SiC power module with SiC MOSFET and SiC SBD
・High-speed switching and low switching loss
・Ensured reliability of body diode conduction

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User Guide
    • Snubber Module - MGSM1D72J2-145MH26

    • Snubber Module for BSM series (1200V, C type)

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