BSM180C12P3C202
1200V, 180A, Chopper, Full-SiC-Leistungsmodul mit Trench-MOSFET
Für neue Designs nicht empfohlen
BSM180C12P3C202
1200V, 180A, Chopper, Full-SiC-Leistungsmodul mit Trench-MOSFET
Produkte, die nicht für neue Designs verwendet werden können (Nicht empfohlen für Designabweichungen).
Produktdetails
Spezifikationen:
Drain-source Voltage[V]
1200
Drain Current[A]
180
Total Power Dissipation[W]
880
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Chopper
Package Size [mm]
122.0x45.6 (t=17.5)
Eigenschaften:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Referenzdesign / Anwendungsevaluierungskit
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This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
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