BSM180D12P3C007
SiC-Leistungsmodul

BSM180D12P3C007 ist ein Halbbrückenmodul bestehend aus Siliziumkarbid UMOSFET und Silikonkarbid Schottky-Diode.

Data Sheet Kaufen *
* Dieses Produkt entspricht der Standardqualifizierung.
Für den Automobilbereich kontaktieren Sie bitte unser Sales-Team.
Data Sheet Kaufen *

Produktdetails

 
Teilenummer | BSM180D12P3C007
Status | Empfohlen
Gehäuse | C
Einheitenmenge | 12
Minimale Gehäusemenge | 12
Gehäusetyp | Corrugated Cardboard
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1200

Drain Current[A]

180

Total Power Dissipation[W]

880

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

122x45.6 (t=17.5)

Find Similar

Eigenschaften:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Evaluation
Board

 
    • Drive Board
    • AgileSwitch 2ASC-12A1HP / EDCA2

    • BSM series (1200V, C type)
      Core Driver : 2ASC-12A1HP
      Adapter Board : EDCA2

  • Purchase Inquiry
    • Drive Board
    • BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

  • User's Guide Purchase Inquiry
    • Drive Board
    • TAMURA 2DU series

    • For BSM series (1200V, C / E / G type)

  • Purchase Inquiry
X

Most Viewed