BSM180D12P3C007
SiC-Leistungsmodul
BSM180D12P3C007
BSM180D12P3C007
SiC-Leistungsmodul
BSM180D12P3C007 ist ein Halbbrückenmodul bestehend aus Siliziumkarbid UMOSFET und Silikonkarbid Schottky-Diode.
Data Sheet
Kaufen
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* Dieses Produkt entspricht der Standardqualifizierung.
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Produktdetails
Spezifikationen:
Drain-source Voltage[V]
1200
Drain Current[A]
180
Total Power Dissipation[W]
880
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
122x45.6 (t=17.5)
Eigenschaften:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Evaluation
Board
-
- Drive Board
- AgileSwitch 2ASC-12A1HP / EDCA2
BSM series (1200V, C type)
Core Driver : 2ASC-12A1HP
Adapter Board : EDCA2
-
- Drive Board
- BSMGD3C12D24-EVK001
This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module
- MGSM1D72J2-145MH26
BSM series (1200V, C type)
-
- Drive Board
- TAMURA 2DU series
For BSM series (1200V, C / E / G type)