BSM180D12P3C007
SiC-Leistungsmodul
BSM180D12P3C007
SiC-Leistungsmodul
BSM180D12P3C007 ist ein Halbbrückenmodul bestehend aus Siliziumkarbid UMOSFET und Silikonkarbid Schottky-Diode.
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Produktdetails
Spezifikationen:
Drain-source Voltage[V]
1200
Drain Current[A]
180
Total Power Dissipation[W]
880
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-bridge
Package Size [mm]
122.0x45.6 (t=17.5)
Eigenschaften:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Referenzdesign / Anwendungsevaluierungskit
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Produktvideo & Katalog
