BSM300C12P3E201
1200V, 300A, Boost-Chopper, Full-SiC-Leistungsmodul mit Trench-MOSFET
BSM300C12P3E201
1200V, 300A, Boost-Chopper, Full-SiC-Leistungsmodul mit Trench-MOSFET
Der BSM300C12P3E201 ist ein SiC- (Siliziumkarbid-) Leistungsmodul mit niedrigem Stromstoß und niedrigen Schaltverlusten, geeignet für Motortreiber, Wandler, Photovoltaik, Windenergieerzeugung.
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Produktdetails
Spezifikationen:
Drain-source Voltage[V]
1200
Drain Current[A]
300
Total Power Dissipation[W]
1360
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Chopper
Package Size [mm]
152.0x62.0 (t=18.0)
Eigenschaften:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Referenzdesign / Anwendungsevaluierungskit
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Produktvideo & Katalog
