ROHM Product Detail

BSM300D12P2E001
SiC-Leistungsmodul

BSM300D12P2E001 ist ein Halbbrückenmodul bestehend aus Siliziumkarbid DMOSFET und Siliziumkarbid Schottky-Diode.

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Produktdetails

 
Teilenummer | BSM300D12P2E001
Status | Empfohlen
Gehäuse | E Type
Gehäusetyp | Corrugated Cardboard
Einheitenmenge | 4
Minimale Gehäusemenge | 4
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1200

Drain Current[A]

300

Total Power Dissipation[W]

1875

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half-bridge

Package Size [mm]

152.0x62.0 (t=18.0)

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Eigenschaften:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Referenzdesign / Anwendungsevaluierungskit

 
    • Drive Board - BSMGD2G12D24-EVK001

    • This evaluation board, BSMGD2G12D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

    • Drive Board - TAMURA 2DU series

    • Drive Board for BSM series (1200V, C / E / G type)

    •

Produktvideo & Katalog

 
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