BSM300D12P3E005
Siliziumkarbid-Leistungsmodul

Der BSM300D12P3E005 ist ein Halbbrückenmodul, bestehend aus einem Siliziumkarbid-UMOSFET und einer Siliziumkarbid-Schottkydiode.

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Produktdetails

 
Teilenummer | BSM300D12P3E005
Status | Empfohlen
Gehäuse | E
Einheitenmenge | 4
Minimale Gehäusemenge | 4
Gehäusetyp | Corrugated Cardboard
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1200

Drain Current[A]

300

Total Power Dissipation[W]

1260

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package Size [mm]

152x57.95 (t=18)

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Eigenschaften:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Evaluation
Board

 
    • Drive Board
    • AgileSwitch 2ASC-12A1HP / EDCA1
    • For BSM series (1200V, E / G type)
      Core Driver : 2ASC-12A1HP
      Adapter Board : EDCA1

    • Drive Board
    • BSMGD3G12D24-EVK001
    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

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