BSM400D12P3G002
1200V, 358A, Halbbrücke, Full-SiC-Leistungsmodul mit Trench-MOSFET
BSM400D12P3G002
1200V, 358A, Halbbrücke, Full-SiC-Leistungsmodul mit Trench-MOSFET
Der BSM400D12P3G002 ist ein Halbbrückenmodul, bestehend aus SiC-UMOSFET und SiC-SBD, geeignet für Motoransteuerung, Wechselrichter, Umrichter, Photovoltaik, Windkraftanlagen, Induktionsheizungen.
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Produktdetails
Spezifikationen:
Drain-source Voltage[V]
1200
Drain Current[A]
358
Total Power Dissipation[W]
1570
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
152x62 (t=18)
Eigenschaften:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Reference Design / Application Evaluation Kit
-
- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
-
- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)
