BSM600D12P4G103
1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET
BSM600D12P4G103
1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET
BSM600D12P4G103 is a half bridge module consisting of SiC-UMOSFET, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
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Produktdetails
Spezifikationen:
Drain-source Voltage[V]
1200
Drain Current[A]
567
Total Power Dissipation[W]
1780
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-bridge
Package Size [mm]
152.0x62.0 (t=18.0)
Eigenschaften:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Referenzdesign / Anwendungsevaluierungskit
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Produktvideo & Katalog
