ROHM Product Detail

BST70M2P4K01-VC (Neues Produkt)
HSDIP20, 1200V, 70/38A, 3-Phase-bridge, Automotive / Industrial Grade SiC Power Module

The BST70M2P4K01 is a high-performance SiC molded module rated for 1200V, designed with a 6-in-1 structure ideal for PFC and LLC circuits in onboard chargers (OBCs). HSDIP20 features an insulating substrate with excellent heat dissipation properties. This helps maintain a stable chip temperature even under high power conditions, enabling high current handling within a compact form factor. Compared to top-side cooled discrete devices, it delivers over 3 times the power density—and 1.4 times that of other DIP modules. In PFC applications, it can reduce the mounting area by about 52%, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs. With essential power conversion circuits built into the module, it reduces design workload and enables the miniaturization of power conversion circuits in OBCs and other applications. As a key solution for next-generation automotive systems, it supports the development of high-output, compact electric powertrains.

Application Examples

  • Automotive systems: Onboard chargers, electric compressors and more.
  • Industrial Equipment: EV charging stations, V2X systems, AC servos, server power supplies, PV inverters, power conditioners, etc.

Produktdetails

 
Teilenummer | BST70M2P4K01-VC
Status | Empfohlen
Gehäuse | HSDIP20
Gehäusetyp | Corrugated Cardboard
Einheitenmenge | 180
Minimale Gehäusemenge | 60
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1200

Drain Current[A]

70/38

Total Power Dissipation[W]

385/227

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

3-Phase-bridge

Package Size [mm]

38.0x31.3 (t=3.5)

Common Standard

AQG-324

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Eigenschaften:

  • HSDIP20 package with the 4th Generation SiC-MOSFET
  • VDSS = 1200V
  • Low RDS(on)
  • High-speed switching possible
  • Low switching losses
  • Tvjmax = 175°C
  • Compact design
  • With high thermal conductivity isolation
  • Integrated NTC temperature sensor
  • 4.2kV AC 1s insulation

Produktvideo & Katalog

 
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