BST91T1P4K01-VC (Neues Produkt)
HSDIP20, 750V, 90A, 3-Phase-bridge, Automotive / Industrial Grade SiC Power Module
BST91T1P4K01-VC (Neues Produkt)
HSDIP20, 750V, 90A, 3-Phase-bridge, Automotive / Industrial Grade SiC Power Module
The BST91T1P4K01 is a high-performance SiC molded module rated for 750V, designed with a 6-in-1 structure ideal for PFC and LLC circuits in onboard chargers (OBCs). HSDIP20 features an insulating substrate with excellent heat dissipation properties. This helps maintain a stable chip temperature even under high power conditions, enabling high current handling within a compact form factor. Compared to top-side cooled discrete devices, it delivers over 3 times the power density—and 1.4 times that of other DIP modules. In PFC applications, it can reduce the mounting area by about 52%, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs. With essential power conversion circuits built into the module, it reduces design workload and enables the miniaturization of power conversion circuits in OBCs and other applications. As a key solution for next-generation automotive systems, it supports the development of high-output, compact electric powertrains.Application Examples
Produktdetails
Spezifikationen:
Drain-source Voltage[V]
750
Drain Current[A]
90
Total Power Dissipation[W]
385
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
3-Phase-bridge
Package Size [mm]
38.0x31.3 (t=3.5)
Common Standard
AQG-324
Eigenschaften:
- HSDIP20 package with the 4th Generation SiC-MOSFET
- VDSS = 750V
- Low RDS(on)
- High-speed switching possible
- Low switching losses
- Tvjmax = 175°C
- Compact design
- With high thermal conductivity isolation
- Integrated NTC temperature sensor
- 4.2kV AC 1s insulation