S6508
650V, 20A, Silicon-carbide (SiC) SBD Bare Die
S6508
S6508
650V, 20A, Silicon-carbide (SiC) SBD Bare Die
S6508 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. Reducing switching loss, enabling high-speed switching operation.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
Data Sheet
* Dieses Produkt entspricht der Standardqualifizierung.
Für den Automobilbereich kontaktieren Sie bitte unser Sales-Team.
Für den Automobilbereich kontaktieren Sie bitte unser Sales-Team.
Produktdetails
Spezifikationen:
Reverse Voltage[V]
650
Continuous Forward Current[A]
20
Generation
3rd Gen
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Eigenschaften:
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- High surge current capability
