SCS205KN (Neues Produkt)
1200V, 5A, SMD, Silicon-carbide (SiC) SBD
SCS205KN
SCS205KN (Neues Produkt)
1200V, 5A, SMD, Silicon-carbide (SiC) SBD
Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)
Data Sheet
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* Dieses Produkt entspricht der Standardqualifizierung.
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Produktdetails
Teilenummer | SCS205KNTRL
Status |
Empfohlen
Gehäuse |
TO-263-2L
Gehäusetyp | Taping
Einheitenmenge | 1000
Minimale Gehäusemenge | 1000
RoHS |
Ja
Spezifikationen:
Grade
Standard
Reverse Voltage[V]
1200
Continuous Forward Current[A]
5
Generation
2nd Gen
Total Power Dissipation[W]
83
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.1x10.1 (t=4.7)
Eigenschaften:
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- Wide creepage distance = min. 5.10mm
Produktvideo & Katalog
Produktvideo-Übersicht
Wide Creepage Distance Package SiC Schottky Barrier Diodes - SCS2xxAN (650V), SCS2xxKN (1,200V)
2024-11-12 00:00:00.0
( 1.09 MB )
The SCS2xxAN (650V) and SCS2xxKN (1,200V) series of SiC Schottky barrier diodes achieve wide creepage distance in a compact surface mount package. This reduces the need for special insulation measures such as potting.
The SCS2xxAN (650V) and SCS2xxKN (1,200V) series of SiC Schottky barrier diodes achieve wide creepage distance in a compact surface mount package. This reduces the need for special insulation measures such as potting.