SCS230AE2
SiC-Schottky-Diode
SCS230AE2
SiC-Schottky-Diode
Reduzierte Schaltverluste, Schnellschaltung ermöglicht. (3-Pin-Gehäuse)
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Produktdetails
Spezifikationen:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
30
Generation
2nd Gen
Total Power Dissipation[W]
230
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
Eigenschaften:
・Kürzere Wiederherstellungszeit・Geringere Temperaturabhängigkeit
・Umschalten mit Höchstgeschwindigkeit möglich
Referenzdesign / Anwendungsevaluierungskit
-
- Reference Design - REF67010
- 3.6kW Interleaved Boost PFC
The REF67010-IPFC_3.6kW-EVK-A04 is a Reference Board with Interleaved Boost PFC topology. It demostrates ROHM’s strong power devices portfolio i.e., high speed switching device Field Trench IGBT and SiC SBD diodes in the Boost Stage. The Auxiliary power supply uses PWM type DC/DC converter IC with 800V Integrated MOSFET and Super-Fast Recovery Diode. The converter is rated at 3.6kW.
This reference design consists of the following three boards.- REF67010-IPFC_3.6kW-EVK-A04_PCBA016: Main board
- REF67010-IPFC_3.6kW-EVK-A04_PCBA017: Auxiliary power supply board
- REF67010-IPFC_3.6kW-EVK-A04_PCBA018: Controller board
Produktvideo & Katalog
