SCS312AG (Neues Produkt)
650V, 12A, THD, Silicon-carbide (SiC) SBD
SCS312AG
SCS312AG (Neues Produkt)
650V, 12A, THD, Silicon-carbide (SiC) SBD
Switching loss reduced, enabling high-speed switching.
Data Sheet
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Produktdetails
Teilenummer | SCS312AGC16
Status |
Empfohlen
Gehäuse |
TO-220ACGE
Gehäusetyp | Tube
Einheitenmenge | 1000
Minimale Gehäusemenge | 50
RoHS |
Ja
Spezifikationen:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
12
Generation
3rd Gen
Total Power Dissipation[W]
78
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.16x19.17 (t=4.44)
Eigenschaften:
- Shorter recovery time
- Reduced temperature dependence
- High-speed switching possible
- High surge current capability
Produktvideo & Katalog
Produktvideo-Übersicht
Wide Creepage Distance Package SiC Schottky Barrier Diodes - SCS2xxAN (650V), SCS2xxKN (1,200V)
2024-11-12 00:00:00.0
( 1.09 MB )
The SCS2xxAN (650V) and SCS2xxKN (1,200V) series of SiC Schottky barrier diodes achieve wide creepage distance in a compact surface mount package. This reduces the need for special insulation measures such as potting.
The SCS2xxAN (650V) and SCS2xxKN (1,200V) series of SiC Schottky barrier diodes achieve wide creepage distance in a compact surface mount package. This reduces the need for special insulation measures such as potting.