R6502END3 (Neues Produkt)
650V 1.7A TO-252, Low-noise Power MOSFET
R6502END3
R6502END3 (Neues Produkt)
650V 1.7A TO-252, Low-noise Power MOSFET
The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.
Data Sheet
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Produktdetails
Teilenummer | R6502END3TL1
Status |
Empfohlen
Gehäuse |
TO-252
Einheitenmenge | 2500
Minimale Gehäusemenge | 2500
Gehäusetyp | Taping
RoHS |
Ja
Spezifikationen:
Package Code
TO-252 (DPAK)
JEITA Package
SC-63
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
650
Drain Current ID[A]
1.7
RDS(on)[Ω] VGS=10V(Typ.)
3.05
RDS(on)[Ω] VGS=Drive (Typ.)
3.05
Total gate charge Qg[nC]
6.5
Power Dissipation (PD)[W]
26
Drive Voltage[V]
10
Trr (Typ.)[ns]
240
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
6.6x10.0 (t=2.4)
Eigenschaften:
- Low on-resistance
- Fast switching
- Drive circuits can be simple
- Parallel use is easy
- Pb-free lead plating; RoHS compliant
