ROHM Product Detail

R6502END3
650V 1.7A TO-252, Low-noise Power MOSFET

The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

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Produktdetails

 
Teilenummer | R6502END3TL1
Status | Empfohlen
Gehäuse | TO-252 (TL1)
Gehäusetyp | Taping
Einheitenmenge | 2500
Minimale Gehäusemenge | 2500
RoHS | Ja

Spezifikationen:

Package Code

TO-252 (DPAK)

JEITA Package

SC-63

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

650

Drain Current ID[A]

1.7

RDS(on)[Ω] VGS=10V(Typ)

3.05

RDS(on)[Ω] VGS=Drive (Typ)

3.05

Total gate charge Qg[nC]

6.5

Power Dissipation (PD)[W]

26

Drive Voltage[V]

10

Trr (Typ)[ns]

240

Mounting Style

Surface mount

Storage Temperature (Min)[℃]

-55

Storage Temperature (Max)[℃]

150

Package Size [mm]

6.2x6.6 (t=2.4)

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Eigenschaften:

  • Low on-resistance
  • Fast switching
  • Drive circuits can be simple
  • Parallel use is easy
  • Pb-free lead plating; RoHS compliant

Produktvideo & Katalog

 
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