Für neue Designs nicht empfohlen
RJ1P12BBD
Nch 100V 120A Leistungs-MOSFET
RJ1P12BBD
Für neue Designs nicht empfohlen
RJ1P12BBD
Nch 100V 120A Leistungs-MOSFET
Produkte, die nicht für neue Designs verwendet werden können (Nicht empfohlen für Designabweichungen).
Produktdetails
Ersatzprodukt für RJ1P12BBD
| Part Number |
_Transistor.png)
|
|
.png)
|
|---|---|---|---|
| Ordering Part Number | RJ1P12BBDTLL | RJ1P10BBHTL1 | RS6P100BHTB1 |
| Similar Level | - | Same Pinout | Similar Specification |
| Data Sheet | |||
| Supply Status | Not Recommended for New Designs | Recommended | Recommended |
| Package | TO-263AB (LPTL) | TO-263AB-3LSHYAD | HSOP8 (Single) |
| Unit Quantity | 1000 | 800 | 2500 |
| Minimum Packing Quantity | 1000 | 800 | 2500 |
| Packing Type | Taping | Taping | Taping |
| RoHS | Yes | Yes | Yes |
| Package Code | TO-263AB | TO-263AB | HSOP8S (5x6) |
| Package Size [mm] | 10.1x9 (t=4.7) | 10.11×15.1 (t=4.77) | 4.9x6 (t=1.1) |
| Number of terminal | 3 | 3 | 8 |
| Polarity | Nch | Nch | Nch |
| Drain-Source Voltage VDSS [V] | 100 | 100 | 100 |
| Drain Current ID [A] | 120.0 | 170.0 | 100.0 |
| RDS(on)[O] VGS=6V (Typ.) | - | 0.0028 | 0.0058 |
| RDS(on)[O] VGS=10V (Typ.) | 0.0044 | 0.0023 | 0.0045 |
| RDS(on)[O] VGS=Drive (Typ.) | 0.0052 | 0.0028 | 0.0058 |
| Drive Voltage [V] | 6.0 | 6.0 | 6.0 |
| Power Dissipation (PD) [W] | 178.0 | 189.0 | 104.0 |
| Total gate charge Qg [nC] | 51.0 | 89.0 | 29.0 |
| Trr (Typ.)[ns] | - | 90 | 63 |
| Mounting Style | Surface mount | Surface mount | Surface mount |
| Applications | - | Switching | - |
| Bare Die P/N | Available: K3706 | - | - |
| Storage Temperature (Min.)[°C] | -55 | -55 | -55 |
| Storage Temperature (Min.)[°C] | 150 | 150 | 150 |
