ROHM Product Detail
Für neue Designs nicht empfohlen
RQ3G100GN
Nch-Leistungs-MOSFET 40 V 10 A
Für neue Designs nicht empfohlen
RQ3G100GN
Nch-Leistungs-MOSFET 40 V 10 A
Produkte, die nicht für neue Designs verwendet werden können (Nicht empfohlen für Designabweichungen).
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Produktdetails
Ersatzprodukt für RQ3G100GN
Part Number |
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---|---|---|
Ordering Part Number | RQ3G100GNTB | RH6G040BGTB1 |
Similar Level | - | Similar Specification |
Data Sheet | ||
Supply Status | Not Recommended for New Designs | Recommended |
Package | HSMT8 (Single,TB) | HSMT8 (Single,TB1) |
Unit Quantity | 3000 | 3000 |
Minimum Packing Quantity | 3000 | 3000 |
Packing Type | Taping | Taping |
RoHS | Yes | Yes |
Package Code | HSMT8 | HSMT8 |
Package Size [mm] | 3.3x3.3 (t=0.9) | 3.3x3.3 (t=0.9) |
Number of terminal | 8 | 8 |
Polarity | Nch | Nch |
V DSS [V] | 40 | 40 |
I D [A] | 27.0 | 95.0 |
R DS(on) (Typ) @4.5V[O] | 0.0141 | 0.0047 |
R DS(on) (Typ) @10V[O] | 0.011 | 0.0028 |
R DS(on) (Typ) @Drive[O] | 0.0141 | 0.0047 |
Drive Voltage [V] | 4.5 | 4.5 |
Power Dissipation (PD) [W] | 15.0 | 59.0 |
Q g (Typ)[nC] | 4.3 | 12.5 |
Mounting Style | Surface mount | Surface mount |
Applications | Power Supply | - |
Storage Temperature (Min)[?] | -55 | -55 |
Storage Temperature (Max)[?] | 150 | 150 |

Produktvideo & Katalog
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Produktvideo-Übersicht

Low ON-Resistance Nch Power MOSFETs RS6/RH6 Series
2023-05-15 00:00:00.0
( 2:09 )
These products utilize ROHM’s latest generation fine element structure that significantly reduces ON resistance per unit area.
These products utilize ROHM’s latest generation fine element structure that significantly reduces ON resistance per unit area.
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