LTR100LJZPFU
Hochleistungs-Chipwiderstand
LTR100LJZPFU
Hochleistungs-Chipwiderstand
Hochleistungs-Chipwiderstände haben an den Längsseiten quadratische Anschlüsse, und weisen eine weit höhere Nennleistung auf als Standardwiderstände. Diese Struktur hat einen kurzen Abstand zwischen den beiden Enden und erreicht eine starke Lötfixierung.
Lineup
Produktdetails
Spezifikationen:
Automotive grade
Yes
Size[mm](inch)
3264(1225)
Rated Power[W]
4
Resistance Tolerance
F (±1%)
Resistance range[Ω]
0.01
Resistance(Min.)[Ω]
0.01
Resistance(Max.)[Ω]
0.01
Temperature Coefficient[ppm/°C]
0 ~ 300
Operating Temperature[°C]
-65 to 155
Type
For current sensing (Wide terminal)
Operating Temperature (Max.)[°C]
155
Common Standard
AEC-Q200 (Automotive Grade)
Eigenschaften:
・Die Nennleistung ist deutlich verstärkt.・Höhere Lötverbindungs-Festigkeit für Temperaturzyklusprüfung.
・Der Widerstandsgrad für den Eingangsstrom wurde verbessert.
Referenzdesign / Anwendungsevaluierungskit
-
- Reference Design - REFLD002
- Laser Driver Reference Design with GaN HEMT for High-Resolution LiDAR
The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. LiDAR sensors are required to have longer sensing distance and higher resolution, and in addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. ROHM offers a lineup of 905nm high power narrow emission width laser diodes. (RLD90QZWx Series) Reference designs are available that includes EcoGAN™, a next-generation device capable of high-speed drive, along with a high-speed gate driver for GaN HEMTs that contribute to improved LiDAR sensor characteristics (distance and resolution) .
- Enables high-speed driving of laser diodes - a key device in LiDAR applications
- Includes next-gen EcoGaN™ devices
- Built-in high-speed gate driver for GaN HEMTs (BD2311NVX-C)
- Two circuit types: square wave and resonant
Produktvideo & Katalog
