ROHM Product Detail

LTR100LJZPJU
Hochleistungs-Chipwiderstand

Hochleistungs-Chipwiderstände haben an den Längsseiten quadratische Anschlüsse, und weisen eine weit höhere Nennleistung auf als Standardwiderstände. Diese Struktur hat einen kurzen Abstand zwischen den beiden Enden und erreicht eine starke Lötfixierung.

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Produktdetails

 
Teilenummer | LTR100LJZPJU
Status | Empfohlen
Gehäuse | LTR100L
Gehäusetyp | Taping
Einheitenmenge | 4000
Minimale Gehäusemenge | 4000
RoHS | Ja
Product Longevity Program | 10 Years

Spezifikationen:

Automotive grade

Yes

Size[mm](inch)

3264(1225)

Rated Power[W]

4

Resistance Tolerance

J (±5%)

Resistance range[Ω]

0.01

Resistance(Min.)[Ω]

0.01

Resistance(Max.)[Ω]

0.01

Temperature Coefficient[ppm/°C]

0 ~ 300

Operating Temperature[°C]

-65 to 155

Type

For current sensing (Wide terminal)

Operating Temperature (Max.)[°C]

155

Common Standard

AEC-Q200 (Automotive Grade)

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Eigenschaften:

・Die Nennleistung ist deutlich verstärkt.
・Höhere Lötverbindungs-Festigkeit für Temperaturzyklusprüfung.
・Der Widerstandsgrad für den Eingangsstrom wurde verbessert.

Referenzdesign / Anwendungsevaluierungskit

 
    • Reference Design - REFLD002
    • Laser Driver Reference Design with GaN HEMT for High-Resolution LiDAR
    • The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. LiDAR sensors are required to have longer sensing distance and higher resolution, and in addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. ROHM offers a lineup of 905nm high power narrow emission width laser diodes. (RLD90QZWx Series) Reference designs are available that includes EcoGAN™, a next-generation device capable of high-speed drive, along with a high-speed gate driver for GaN HEMTs that contribute to improved LiDAR sensor characteristics (distance and resolution) .


      • Enables high-speed driving of laser diodes - a key device in LiDAR applications
      • Includes next-gen EcoGaN™ devices
      • Built-in high-speed gate driver for GaN HEMTs (BD2311NVX-C)
      • Two circuit types: square wave and resonant

Produktvideo & Katalog

 
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