SCT3080KRHR
1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT3080KRHR
SCT3080KRHR
1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
AEC-Q101 qualified automotive grade product. SCT3080KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Produktdetails
Spezifikationen:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
3rd Gen (Trench)
Drain Current[A]
31
Total Power Dissipation[W]
165
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x23.45 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
Eigenschaften:
- Qualified to AEC-Q101
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
