SCT3105KR
1200 V Nch SiC Trench MOSFET im 4-Pin-Gehäuse

Der SCT3105KR ist ein SiC-MOSFET mit einer Trench-Gate-Struktur, der für EV-Ladestationen, Solarwechselrichter, and Server-Stromversorgungen optimiert ist, die einen hohen Wirkungsgrad erfordern. Ein neues 4-oliges Gehäuse wird verwendet, das die Leistungs- und Treiber-Source-Terminals trennt, wodurch eine Maximierung der Hochgeschwindigkeits-Schaltleistung ermöglicht wird. Dadurch werden insbesondere die Verluste im ON-Betrieb verbessert, so dass die gesamten Ein- und Ausschaltverluste im Vergleich zum herkömmlichen 35-Pin Gehäuse (%p) um bis zu 3 % reduziert werden können.

Als Pionier und Branchenführer in der SiC-Technologie war ROHM der erste Anbieter, der Trench-Typ-MOSFETs in Massenproduktion herstellte, die den Wirkungsgrad weiter verbessern und gleichzeitig den Stromverbrauch im Vergleich zu bisherigen SiC-MOSFETs senken.

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Produktdetails

 
Teilenummer | SCT3105KRC14
Status | Empfohlen
Gehäuse | TO-247-4L
Einheitenmenge | 240
Minimale Gehäusemenge | 30
Gehäusetyp | Tube
RoHS | Ja

Spezifikationen:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

105.0

Drain Current[A]

24.0

Total Power Dissipation[W]

134

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x23.45 (t=5.2)

Eigenschaften:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating; RoHS compliant
  • High efficiency 4pin package
  • Evaluation board 'P02SCT3040KR-EVK-001'

Evaluation
Board

 
    • Evaluation Board
    • P02SCT3040KR-EVK-001

      • For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
        Enables evaluation of other ROHM SiC MOSFETs by simply changing the circuit multiplier
      • In addition to the TO-247-4L package, there are through-holes for TO-247-3L that make it possible to perform comparative evaluations on the same board
      • Single power supply (+12V operation)
      • Supports double pulse testing up to 150A and switching up to 500kHz
      • Compatible with a variety of power supply topologies (Buck/Boost/Half Bridge)
      • Built-in isolated power supply for gate drive adjustable via variable resistor (+12V to +23V)
      • Jumper pins enable switching between negative bias/zero bias for gate drive
      • Includes overcurrent protection (DESAT, OCP) along with a function for preventing simultaneous ON of both upper and lower arms

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Unterlagen

White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

User's Guide

  • P02SCT3040KR-EVK-001 User's Guide
  • TO-247-4L Half-Bridge Evaluation Board Product Specification and usage guide.

Application Note

  • Improvement of switching loss by driver source

Technische Artikel

Schematic Design & Verification

  • [NEW]Application Note for SiC Power Devices and Modules
  • Calculating Power Loss from Measured Waveforms
  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Precautions during gate-source voltage measurement for SiC MOSFET
  • Snubber circuit design methods for SiC MOSFET
  • Gate-source voltage behaviour in a bridge configuration
  • Gate-Source Voltage Surge Suppression Methods
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • What Is Thermal Design
  • Method for Calculating Junction Temperature from Transient Thermal Resistance Data
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Thermocouples
  • What is a Thermal Model? (SiC Power Device)
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Design Tools

Models

  • SCT3105KR PLECS Model
  • SCT3105KR SPICE Model
  • SCT3105KR Thermal Model (lib)
  • How to Create Symbols for PSpice Models

Packaging & Qualität

Package Information

  • TO-247-4L Dimensions
  • TO-247-4L Inner Structure
  • TO-247-4L Taping Information
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)